NGK develop GaN Wafer for new Ultra High Brightness LED’s

NGK's GaN wafer
LED element under light emitting test. Injection current: approx. 200mA, Center wavelength: 450nm (Image: © NGK Insulators, Ltd)

NGK Insulators, Ltd. has announced it has developed gallium nitride (GaN) wafers that can double the luminous efficiency of a LED light source compared to conventional materials.

With the assistance of a research institute outside the company, tests were performed to measure the luminous efficiency of an LED element using NGK’s new GaN wafer. With an injection current of 200mA, the GaN wafer during the tests showed an internal quantum efficiency of 90%. The GaN wafer achieved a luminous efficiency of 200lm/W, which is twice as efficient as those on the market today. This in affect means that with this new solution the power consumption can be reduced by up to 50%, while upholding the same brightness of a traditional LED.

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