NGK’s GaN wafer

NGK's GaN wafer

LED element under light emitting test. Injection current: approx. 200mA, Center wavelength: 450nm (Image: © NGK Insulators, Ltd)

LED element under light emitting test
Substrate size: 1cm square, Element size: 0.3mm square
Injection current: approx. 200mA, Center wavelength: 450nm